Optical and Electrical Properties of Thin Film BaSnO3 Author

Thin films of the perovskite barium tin oxide (BaSnO3) were prepared and characterized by their structural optical, electrical, and photoluminescent characteristics. Film deposition methods included both RF sputtering and pulsed laser deposition techniques. High quality, oriented films having optical bandgaps ranging between 3.7 eV & 4.4 eV were produced on various substrates. The undoped films were both highly insulating and transparent, making them potential candidates in gas-sensor applications and as insulating layers in transparent transistors. They did not show evidence of photoluminescence that had been reported in the bulk. Films doped with potassium, indium and lanthanum remained highly transparent but failed to exhibit any semiconducting characteristics.